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Keywords   [ high electron mobility transistor ]  Match 5 Products.
Quality TQP3M9009 is a high-performance gallium arsenide pseudomorphic high-electron-mobility transistor factory

TQP3M9009 is a high-performance gallium arsenide pseudomorphic high-electron-mobility transistor
Quality CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT factory

CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT
Quality GaAs PHEMT RF Switch with 100 MHz to 4 GHz Frequency Range 50 Ω Nonreflective Design and 57 dB High Isolation factory

GaAs PHEMT RF Switch with 100 MHz to 4 GHz Frequency Range 50 Ω Nonreflective Design and 57 dB High Isolation
Quality HMC451LP3ETR is a GaAs PHEMT MMIC from Analog Devices Inc factory

HMC451LP3ETR is a GaAs PHEMT MMIC from Analog Devices Inc
Quality HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc factory

HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc
ImagePart #DescriptionmanufacturerStockRFQ
Quality TQP3M9009 is a high-performance gallium arsenide pseudomorphic high-electron-mobility transistor factory

TQP3M9009 is a high-performance gallium arsenide pseudomorphic high-electron-mobility transistor
Quality CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT factory

CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT
Littelfuse Inc.
Quality GaAs PHEMT RF Switch with 100 MHz to 4 GHz Frequency Range 50 Ω Nonreflective Design and 57 dB High Isolation factory

GaAs PHEMT RF Switch with 100 MHz to 4 GHz Frequency Range 50 Ω Nonreflective Design and 57 dB High Isolation
Quality HMC451LP3ETR is a GaAs PHEMT MMIC from Analog Devices Inc factory

HMC451LP3ETR is a GaAs PHEMT MMIC from Analog Devices Inc
Quality HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc factory

HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc
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