CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT
Specifications
Product Type:
GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Package Height:
0.75 Mm
Package Type:
Surface Mount
Supply Voltage:
3.3V
Package Material:
Ceramic
Frequency Range:
DC To 110 GHz
Input Return Loss:
20dB
Output Return Loss:
20 DB
Application:
RF And Microwave
Package Size:
3 Mm X 3 Mm
Operating Temperature:
-40°C To +85°C
Power Output:
Up To 100 W
Gain:
Up To 40 DB
Noise Figure:
0.5 DB
Factory Pack Quantity:
20
Highlight:
CGHV96050F2 Transistor HEMT
,20dB Gallium Nitride GaN
,3.3V High Electron Mobility Transistor
Introduction
CGHV96050F2 Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)
Product Overview
The CGHV96050F2 is a high-performance GaN HEMT on Silicon Carbide (SiC) substrate from MACOM, designed for demanding RF and microwave applications with superior power density and thermal performance.
Technical Specifications
Attribute | Value |
---|---|
Product Type | GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt |
Package Dimensions | 3 mm x 3 mm x 0.75 mm (Ceramic) |
Operating Voltage | 3.3 V |
Frequency Range | DC to 110 GHz |
Return Loss | 20 dB (Input & Output) |
Temperature Range | -40°C to +85°C |
Power Output | Up to 100 W |
Gain | Up to 40 dB |
Noise Figure | 0.5 dB |
Package Quantity | 20 units |
Key Features
- High-frequency operation: 8.4-9.6 GHz range for demanding RF applications
- Exceptional efficiency: Excellent power-added efficiency with minimal degradation (<0.1 dB)
- Superior thermal performance: GaN-on-SiC technology for optimal heat dissipation
- Compact power solution: Higher power density than GaAs or Si-based alternatives
- Broadband capability: Wide bandwidth suitable for diverse applications
Primary Applications
Radar Systems:
- Marine radar for navigation and collision avoidance
- Weather monitoring for meteorological observation
- Air traffic control radar systems
Security & Monitoring:
- Maritime vessel traffic management
- Port security and coastal surveillance systems
Send RFQ
Stock:
MOQ:
10