HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc
Specifications
MFR:
ADI
Product Number:
HMC903LP3E
Description:
RF Amplifier IC General Purpose 6GHz ~ 17GHz 16-QFN (3x3)
Highlight:
GaAs pHEMT MMIC LNA amplifier
,Analog Devices HMC903LP3E amplifier
,low noise amplifier with GaAs
Introduction
HMC903LP3E GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc
The HMC903LP3E is a GaAs pHEMT MMIC (Gallium Arsenide Pseudomorphic High-Electron-Mobility Transistor Monolithic Microwave Integrated Circuit) Low Noise Amplifier (LNA) from Analog Devices Inc. It operates over a broad frequency range of 6 GHz to 17 GHz and is housed in a compact, 3x3 mm, 16-lead QFN (Quad Flat No-leads) surface-mount package.
This self-biased amplifier is designed for high-frequency applications requiring low noise, high gain, and excellent linearity.
Key Features
| Feature Category | Specification Details |
|---|---|
| Frequency Range | 6 GHz to 17 GHz |
| Gain | 18 dB to 18.5 dB (Typ.) |
| Noise Figure (NF) | 1.7 dB (Typ., 6-16 GHz) |
| Output Power (P1dB) | +14 dBm to +14.5 dBm (Typ.) |
| Output IP3 (OIP3) | +25 dBm (Typ.) |
| Supply Voltage | +3.5 V (Single supply, 4.5V max) |
| Supply Current | 80 mA (Typ.), 110 mA (Max.) |
| Power Consumption | ~280 mW (Typ.) |
| Input/Output Impedance | 50 Ω (Internally matched, DC-blocked) |
| Bias Control | Self-biased with optional bias control for reduced IDQ |
| Package | 16-lead QFN/LFCSP (3mm x 3mm with exposed pad) |
| Operating Temperature | -40°C to +85°C (Some sources note -55°C to +85°C) |
Applications
The HMC903LP3E is designed for high-frequency microwave systems where low noise and high linearity are critical:
- Point-to-Point & Point-to-Multipoint Radio Links: Used in microwave backhaul radios for cellular infrastructure and data links due to its wide bandwidth and high performance.
- Military, Aerospace, and Space Systems: Employed in electronic warfare (EW), radar systems, and satellite communications (SATCOM/VSAT) due to its robustness and performance across a wide temperature range.
- Test and Measurement Equipment: Ideal for signal generators, spectrum analyzers, and network analyzers as a low-noise gain stage.
- Local Oscillator (LO) Driver: The +14.5 dBm P1dB output power makes it suitable for driving balanced, I/Q, or image-rejection mixers.
Key Strengths and Advantages
- Low Noise Figure (1.7 dB): Essential for maintaining high signal integrity and sensitivity in receiver front-ends.
- High Linearity (OIP3 = +25 dBm): Minimizes intermodulation distortion in dense signal environments.
- High Integration and Ease of Use: The self-biasing architecture and internal 50-ohm matching on both input and output simplify design and reduce external component count. The DC-blocked I/O ports further enhance design simplicity.
- Compact Form Factor: The small 3x3 mm QFN package is suitable for high-density PCB designs common in modern RF systems.
- Wide Bandwidth: Covers multiple microwave bands (C, X, Ku) with a single component, offering design flexibility.
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