HMC451LP3ETR is a GaAs PHEMT MMIC from Analog Devices Inc

The HMC451LP3ETR is a GaAs PHEMT MMIC (Gallium Arsenide Pseudomorphic High-Electron-Mobility Transistor Monolithic Microwave Integrated Circuit) medium-power amplifier from Analog Devices Inc.

Designed for radio frequency (RF) applications, this amplifier operates within a broad frequency range of 5 GHz to 18 GHz. The device comes in a compact, surface-mount 16-lead QFN (Quad Flat No-leads) package (3mm x 3mm) with an exposed pad, making it ideal for high-frequency PCB designs.

• Microwave Radio & VSAT (Very Small Aperture Terminal): Used in satellite communication systems and point-to-point radio links due to its wide bandwidth and medium power output.
• Military, Aerospace, and Defense Systems: Employed in radar systems, electronic warfare (EW) jammers, and secure communications equipment where high reliability and performance over a broad frequency range are critical.
• Test and Measurement Equipment: Ideal for signal generators, spectrum analyzers, and network analyzers as a gain block or driver amplifier.
• Fiber Optic Communication: Used in high-speed optical communication systems for signal amplification.
• Local Oscillator (LO) Driver: Commonly used to drive HMC mixers (e.g., in upconversion/downconversion stages) due to its high linearity and output power.

• Broad Frequency Range (5-18 GHz): Covers multiple microwave bands (C, X, Ku) with consistent performance.
• High Integration: Requires no external matching components (50 Ω matched internally), simplifying PCB design and reducing component count.
• Excellent Linear Performance: High output IP3 (28 dBm typical) and P1dB (~19.5 dBm) make it suitable for linear applications.
• Robust Thermal Performance: The QFN package with an exposed pad facilitates efficient heat dissipation.