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ART2K0FE is a 2000W LDMOS RF power transistor developed by Ampleon

RF/IF and RFID
June 24, 2025
Category Connection: RF IF And RFID
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Tags:
#rf receiver ic #rf transmitter chip #rf amplifier chip
Brief: Discover the ART2K0FE, a 2000W LDMOS RF power transistor by Ampleon, designed for high-performance applications in industrial, broadcast, and communications sectors. Learn about its robust features and wide-ranging compatibility.
Related Product Features:
  • Delivers 2000W of output power with 28.4 dB gain and 72.1% drain efficiency.
  • Operates across a broad frequency range of 1 MHz to 400 MHz.
  • Supports drain-source voltages from 30V to 65V for flexible operation.
  • Features integrated dual-sided ESD protection for rugged performance.
  • Achieves >69% drain efficiency with excellent thermal management.
  • Ideal for ISM, broadcast, aerospace, and research applications.
  • RoHS compliant, meeting global environmental standards.
  • Available with evaluation boards for easy integration.
Faqs:
  • What is the power output of the ART2K0FE transistor?
    The ART2K0FE delivers 2000W of output power at 1dB gain compression with a power gain of 28.4 dB and drain efficiency of 72.1%.
  • What applications is the ART2K0FE suitable for?
    It is ideal for industrial, scientific, medical (ISM) applications, broadcast & communications, aerospace & defense, and research & development.
  • Does the ART2K0FE support different voltage modes?
    Yes, it supports drain-source voltages from 30V to 65V, enabling Class E and Class C operation with full transistor shutdown.
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