BSH103,215 20V N-channel Power MOSFET with 3.8Ω Ultra-Low On-Resistance and 200mA Current Capacity for Efficient Power Switching
Specifications
Manufacturer:
Nexperia
Product Number:
BSH103,215
Description:
MOSFET BSH103/SOT23/TO-236AB
Highlight:
20V Power MOSFET
,3.8Ω ultra-low on-resistance MOSFET
,200mA current capacity MOSFET
Introduction
BSH103,215 - 20V N-Channel Power MOSFET
Core Function
The BSH103,215 is a high-performance N-channel enhancement-mode power MOSFET designed for low-voltage, high-efficiency power switching and signal amplification applications. Key features include:
- Ultra-low on-resistance (RDS(on) = 3.8 Ω typical at VGS = 4.5 V)
- Low drain-source voltage rating (VDS = 20 V) for minimal power dissipation
- Maximum continuous drain current (ID) of 200 mA
- Low gate charge (Qg) for high switching efficiency
- Compact SOT-23 package for space-saving integration
- Advanced process technology for superior thermal stability
- Low input capacitance and fast switching speeds
This MOSFET delivers reliable performance in compact, heat-constrained environments, making it ideal for battery-powered and energy-sensitive applications.
Key Applications
Portable Electronics
Power management in smartphones, tablets, portable media players, and wearable devices where low power consumption and compact size are critical.
Battery-Powered Devices
Battery management circuits for wireless peripherals and portable sensors, optimizing battery life through efficient switching.
Signal Amplification
Low-power audio amplifiers, signal buffers, and analog switching circuits in consumer electronics.
DC-DC Converters
Low-voltage DC-DC buck/boost converters for IoT devices, MCUs, and embedded systems.
Load Switching
Power distribution circuits for small appliances, industrial sensors, and automotive systems.
Consumer Electronics
Digital cameras, gaming consoles, and other portable devices for peripheral circuit power switching.
IoT & Wearable Technology
IoT sensors, smart home devices, and wearable health monitors requiring power efficiency and miniaturization.
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