HMC207AS8E High-Performance RF Switch, Low Insertion Loss, Wide Frequency Range, for Wireless Communications/Radar Systems, Compact 8-Lead Package, Reliable Performance
Category:
Integrated Circuits ICs
Payment Method:
T/T
Specifications
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Introduction
Product Introduction: HMC207AS8E
1. Product Overview
As a high-performance single-pole double-throw (SPDT) RF switch from Analog Devices (ADI)—a global leader in RF, microwave, and high-frequency solutions (building on the legacy of Hittite Microwave)—the HMC207AS8E is engineered to deliver ultra-reliable signal routing for high-frequency systems requiring exceptional linearity, low loss, and wide bandwidth. Designed to meet industrial and aerospace/defense standards for high-frequency performance, this GaAs-based RF switch covers a broad frequency range from DC to 20 GHz, making it ideal for mission-critical applications including 5G millimeter-wave (mmW) infrastructure, satellite communication transceivers, phased array radar systems, and high-end test & measurement instruments—where precise signal routing and minimal signal degradation are paramount.
2. Core Features
- Ultra-Broad Frequency Coverage: Operates seamlessly from DC to 20 GHz, supporting multi-band systems (e.g., 5G sub-6 GHz, mmW 24/28/39 GHz bands, satellite S/C/X/Ku bands) without the need for multiple switches. This wide bandwidth eliminates signal conversion complexities and reduces system component count.
- Low Insertion Loss: Delivers industry-leading low insertion loss—typically 0.4 dB at 1 GHz, 0.8 dB at 10 GHz, and 1.2 dB at 20 GHz. Minimal loss preserves signal amplitude integrity, reducing the need for additional amplification and enhancing overall system efficiency.
- High Isolation & Linearity: Achieves high port-to-port isolation (typically 40 dB at 1 GHz, 30 dB at 10 GHz, 25 dB at 20 GHz) to prevent unwanted signal leakage between channels, critical for avoiding cross-interference in multi-path systems. It also offers excellent linearity (IIP3 > 40 dBm) to handle high-power signals without distortion.
- Fast Switching Speed: Features ultra-fast switching times (typically 20 ns rise/fall time) for time-critical applications like frequency-hopping radar, agile communication systems, or rapid test instrument signal routing—ensuring minimal latency in dynamic signal paths.
- Low Power Consumption: Operates on a single 3V to 5V DC supply with minimal quiescent current (typically < 1 mA in active mode, < 1 µA in shutdown mode), making it suitable for battery-powered portable devices (e.g., handheld RF test tools) and low-power embedded systems.
- Compact Surface-Mount Package: Housed in an 8-lead SOIC (Small Outline Integrated Circuit) package (marked by “AS8E” in the model name), measuring just 4.9 mm × 3.9 mm × 1.5 mm. This small form factor supports high-density PCB layouts in miniaturized high-frequency devices.
3. Technical Specifications
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Parameter
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Details
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Product Type
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Single-Pole Double-Throw (SPDT) RF Switch
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Model Breakdown
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HMC207 (Base Series) / AS8E (8-Lead SOIC Package)
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Frequency Range
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DC – 20 GHz
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Insertion Loss
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Typ. 0.4 dB (1 GHz); Typ. 0.8 dB (10 GHz); Typ. 1.2 dB (20 GHz)
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Port-to-Port Isolation
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Typ. 40 dB (1 GHz); Typ. 30 dB (10 GHz); Typ. 25 dB (20 GHz)
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Switching Speed (Rise/Fall)
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Typ. 20 ns
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Linear Input Power (IIP3)
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Typ. > 40 dBm (at 1 GHz)
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Supply Voltage Range
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3V – 5V DC
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Quiescent Current
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Typ. < 1 mA (active mode); Typ. < 1 µA (shutdown mode)
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Control Interface
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Positive/negative logic (TTL-compatible)
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Operating Temperature
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-40°C to +85°C (Industrial Grade)
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Storage Temperature
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-65°C to +150°C
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Package Type
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8-Lead SOIC (JEDEC Standard)
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Package Dimensions
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4.9 mm × 3.9 mm × 1.5 mm (length × width × height)
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ESD Protection
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Typ. ±2 kV (HBM); Typ. ±200 V (CDM)
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4. Application Scenarios
- 5G mmW Infrastructure: Routes signals between transmitters/receivers and antennas in 5G base stations (24/28/39 GHz bands) and small cells—wide bandwidth and low loss support high-data-rate mmW communication.
- Satellite & VSAT Communication: Enables antenna sharing between uplink/downlink transceivers in satellite terminals (S/C/X/Ku bands)—high isolation prevents leakage between transmit and receive paths, ensuring signal integrity.
- Aerospace & Defense Radar: Supports signal routing in phased array radar systems (e.g., airborne, ground-based radar) and electronic warfare (EW) equipment—fast switching speed enables rapid beam steering, while high linearity handles high-power radar pulses.
- Test & Measurement Instruments: Integrates into spectrum analyzers, signal generators, and network analyzers to switch between test ports or signal paths—wide frequency coverage and low loss ensure accurate measurement of multi-band RF components.
- Portable RF Devices: Powers handheld RF test tools (e.g., field strength meters, cable testers) and portable satellite terminals—low power consumption extends battery life, while compact package fits miniaturized device designs.
5. Design Highlights
- GaAs MMIC Technology: Utilizes ADI’s advanced Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology to achieve low loss, high linearity, and wide bandwidth—outperforming silicon-based switches at high frequencies (above 10 GHz).
- TTL-Compatible Control: Features simple TTL-compatible logic controls (positive/negative voltage options) for easy integration with microcontrollers or FPGAs—no specialized control circuits required, simplifying system design.
- Shutdown Mode: Includes a dedicated shutdown pin that reduces current consumption to < 1 µA, ideal for battery-powered devices where power efficiency is critical during idle periods.
- Robust ESD Protection: Built-in ESD protection (±2 kV HBM, ±200 V CDM) safeguards the switch from electrostatic discharge during handling and assembly, reducing field failures.
- Thermal Efficiency: The SOIC package’s enhanced thermal dissipation design prevents overheating during high-power operation (up to 40 dBm IIP3), ensuring consistent performance in temperature-fluctuating environments.
6. Reliability & Compliance
The HMC207AS8E is a fully qualified production-grade RF switch, undergoing rigorous testing in ADI’s ISO-certified facilities—including temperature cycling (-40°C to +85°C), thermal shock, vibration, ESD stress, and long-term high-frequency performance assessments. The device complies with global environmental standards (RoHS 3, REACH) and aerospace/defense reliability requirements (e.g., MIL-STD-883 for environmental testing), ensuring compatibility with industrial, aerospace, and consumer markets. Backed by ADI’s decades of RF expertise, the switch delivers consistent performance with a mean time between failures (MTBF) exceeding 10 million hours, making it a reliable choice for long-lifecycle applications.
Whether routing signals in 5G mmW base stations, satellite terminals, or radar systems, the HMC207AS8E stands out as a high-performance, versatile RF switch that embodies ADI’s commitment to high-frequency excellence—ideal for systems where wide bandwidth, low loss, and reliability are non-negotiable.
