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IRFR5410TRPBF MOSFETs 1 P-CH -100V HEXFET 205mOhms 70nC

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Integrated Circuits ICs
Specifications
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P-CH MOSFET HEXFET -100V

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P-CH MOSFET 205mOhms

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P-CH MOSFET 70nC

Introduction
IRFR5410TRPBF MOSFETs 1 P-CH -100V HEXFET 205mOhms 70nC
The IRFR5410TRPBF is a common N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed primarily for power switching applications.
Key Features
  • Power Handling: Maximum drain-source voltage (VDS) of 100V with continuous drain current (ID) of 17A for steady power delivery.
  • Low On-Resistance: Drain-source on-resistance (RDS(on)) as low as 0.033 ohms for efficient operation with minimal heat generation.
  • Compact Package: TO-252 (DPAK) surface-mount package for space-efficient board mounting.
  • Fast Switching: Optimized for rapid on/off transitions in power supply and motor control applications.
  • Built-In Protection: Integrated Zener diode between gate and source pins for protection against voltage spikes.
Typical Applications
This MOSFET is commonly used in DC-DC converters, motor drivers, power supplies, and other circuits requiring efficient power switching.
Note: The IRFR5410TRPBF offers reliable performance in power management applications with its combination of high voltage tolerance, low resistance, and compact form factor.
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