IRLR3410TRPBF MOSFETs 100 V 1 N-CH HEXFET 105 mΩ 22,7 nC
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Introduction
IRLR3410TRPBF MOSFETs 100 V 1 N-CH HEXFET 105 mΩ 22,7 nC
The IRLR3410TRPBF is a high-performance N-channel MOSFET designed for demanding power applications.
Key Features
- High Voltage and Current Capacity: Drain-source breakdown voltage (VDS) up to 100V with continuous drain current (ID) of 17A at 25°C for high-power applications.
- Low On-Resistance: Maximum on-resistance (RDS(ON)) as low as 105 mΩ at VGS=10V, minimizing power loss and improving efficiency.
- Wide Gate-Source Voltage Range: ±16V maximum gate-source voltage (VGS) for compatibility with various control circuits.
- Fast Switching Performance: Input capacitance (Ciss) of 800 pF at 25V ensures rapid response in high-frequency applications.
- High Power Handling: Maximum power dissipation (PD) of 79W for stable operation in demanding environments.
- Extended Temperature Range: Operational from -55°C to 175°C for reliable performance in extreme conditions.
- Compact Package: TO-252-3 (DPAK) package offers excellent thermal performance in space-constrained applications.
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