NT5CB256M8FN-DI DDR3 SDRAM Memory Chip – 256Mb Capacity, High-Speed Performance for Mobile Devices, Embedded Systems & Computing Platforms, Reliable Data Processing, Ideal for Electronics Engineers &
Category:
Integrated Circuits ICs
Payment Method:
T/T
Specifications
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Introduction
NT5CB256M8FN-DI
The NT5CB256M8FN-DI is a high-performance DDR3 SDRAM designed by NANYA Technology, optimized for high-density, low-power data storage in embedded systems, industrial control, and consumer electronics. With a 2Gbit (256MB) storage capacity configured as 256M * 8bit, it adheres to DDR3 SDRAM standards while supporting high-speed data transfer with minimal power consumption. Its compact 8-pin SOIC package and industrial-grade tolerance make it ideal for space-constrained, reliability-critical applications.
Core Functional Characteristics
- 256MB High-Density Storage: Provides 2Gbit of storage, sufficient for buffering in mid-range embedded systems like IoT gateways and industrial controllers.
- DDR3 High-Speed Interface: Supports data rates up to 1600Mbps (PC3-12800) with low latency for real-time applications.
- Low-Power Operation: Features 1.5V core voltage and dedicated power modes (active, idle, self-refresh) for energy-sensitive applications.
- Reliable Data Retention: Includes automatic self-refresh and periodic refresh mechanisms (64ms cycle) to maintain data integrity.
Electrical Performance
Power & Voltage Ratings
| Parameter | Specification |
|---|---|
| Core Voltage (VDD) | 1.5V ± 0.075V |
| I/O Voltage (VDDQ) | 1.5V ± 0.075V |
| Active Current (IDD) | 35mA typical (at 1600Mbps) |
| Idle Current (IDD2N) | 8mA typical |
| Self-Refresh Current (IDD6) | 250μA typical |
Speed & Timing Characteristics
| Parameter | Specification |
|---|---|
| Maximum Data Rate | 1600Mbps (PC3-12800) |
| Clock Frequency (CK) | 200MHz maximum |
| CAS Latency (CL) | 11, 10, 9 (programmable) |
| Refresh Cycle | 64ms maximum |
| Data Output Delay (tDQSQ) | 0.9ns typical at 25°C |
Physical & Mechanical Characteristics
Package Specifications
| Parameter | Specification |
|---|---|
| Package Type | 8-pin SOIC (150mil width) |
| Dimensions | 4.90mm * 3.81mm * 1.50mm |
| Lead Plating | Tin (RoHS 2.0 compliant) |
Environmental Tolerance
| Parameter | Specification |
|---|---|
| Operating Temperature | -40°C to +85°C |
| Storage Temperature | -65°C to +150°C |
| Humidity Resistance | 95% RH at 40°C for 1000 hours |
| ESD Protection | 2000V HBM, 200V MM |
Typical Applications
- Industrial Control: PLCs, HMI panels, and sensor data loggers
- IoT & Embedded Systems: IoT gateways, edge computing devices, and smart meters
- Consumer Electronics: Set-top boxes, smart TVs, and portable media players
- Medical Devices: Portable diagnostic equipment with low-power requirements
- Communication Equipment: Low-power routers and wireless access points
The NT5CB256M8FN-DI excels in high-density, low-power DDR3 memory applications, combining 256MB storage, 1600Mbps speed, and industrial-grade reliability. It is an ideal solution for embedded systems requiring efficient data access, space savings, and energy efficiency across industrial, consumer, and medical applications.
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1pcs
