BAT68E6327 Schottky Barrier Diode Infineon Technologies RF Schottky Diode
Specifications
MFR:
Infineon Technologies
PN:
BAT68E6327HTSA1
Description:
RF Diode Schottky - Single 8V 130 MA 150 MW PG-SOT23
Highlight:
BAT68E6327 Schottky Barrier Diode
,Schottky Barrier Diode Infineon
,BAT68E6327 RF Schottky Diode
Introduction
BAT68E6327 Schottky Barrier Diode
Product Attributes
| Manufacturer | Infineon Technologies |
|---|---|
| Part Number | BAT68E6327HTSA1 |
| Description | RF Diode Schottky - Single 8V 130 mA 150 mW PG-SOT23 |
Product Description
The BAT68E6327 is a Schottky barrier diode from Infineon Technologies, designed for RF and high-frequency applications.
Key Features
- Electrical Characteristics
- Peak Reverse Voltage (Vr): 8V
- Maximum Forward Current (If): 130mA
- Low Forward Voltage Drop (Vf): 390mV (typ) at 5mA
- Ultra-Low Capacitance: 1pF @ 0V, 1MHz
- High-Frequency Performance
- Optimized for RF and microwave circuits due to fast switching and low noise
- Low series resistance (Rs): 10Ω @ 5mA, 10kHz
- Package & Reliability
- SOT-23-3 (SC-59, TO-236-3) surface-mount package
- Wide temperature range: -55°C to +150°C
- RoHS compliant & lead-free
Applications
- RF signal detection & mixing (e.g., VHF/UHF circuits)
- Voltage clamping & protection circuits
- High-speed data networks & wireless communication (e.g., base stations, satellite receivers)
- Low-power signal rectification in portable electronics
Technical Summary
Package: SOT-23-3 (3-pin)
Power Dissipation: 150mW max
Equivalent Models: BAT68-07W, BAT68-08S (for alternate pinouts)
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