IXFN38N100Q2
Specifications
Packaging ::
Tube
Height ::
9.6 Mm
Id - Continuous Drain Current ::
38 A
Pd - Power Dissipation ::
890 W
Package ::
Module
Product Category ::
Discrete Semiconductor Modules
RoHS ::
Green Available
Fall Time ::
15 Ns
Number Of Channels ::
1 Channel
Factory Pack Quantity ::
10
Vgs - Gate-Source Voltage ::
- 30 V, + 30 V
Product ::
Power MOSFET Modules
Manufacturer ::
IXYS
Highlight:
IXFN38N100Q2 power MOSFET module
,Discrete Semiconductor Module with warranty
,IXFN38N100Q2 high voltage module
Introduction
The IXFN38N100Q2,from IXYS,is Discrete Semiconductor Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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---|---|---|---|
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MEA300-06DA |
Discrete Semiconductor Modules 600 Amps 600V
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|
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MUBW20-06A6K |
Discrete Semiconductor Modules 20 Amps 600V
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MDD95-20N1B |
Discrete Semiconductor Modules 95 Amps 2000V
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MDD172-12N1 |
Discrete Semiconductor Modules 172 Amps 1200V
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|
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MMO90-12io6 |
Discrete Semiconductor Modules 90 Amps 1200V
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MCD161-22io1 |
Discrete Semiconductor Modules 161 Amps 2200V
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MEO450-12DA |
Discrete Semiconductor Modules 450 Amps 1200V
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MCO100-16io1 |
Discrete Semiconductor Modules 100 Amps 1600V
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MCC21-14io8B |
Discrete Semiconductor Modules 21 Amps 1400V
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MCO600-16io1 |
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