IKW50N65F5 Insulated Gate Bipolar Transistor IGBT Produced By Infineon Technologies
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IKW50N65F5
,Insulated Gate Bipolar Transistor IGBT
The IKW50N65F5 is a high-performance insulated-gate bipolar transistor (IGBT) produced by Infineon Technologies, designed for demanding power electronics applications with its exceptional voltage handling and efficiency characteristics.
| Attribute | Value |
|---|---|
| Package Type | TO247-3 |
| Voltage Rating | 650V |
| Current Rating | 80A |
| Material | Silicon |
| Carrier Type | Electrons or holes |
| Thermal Properties | High conductivity, temperature stable |
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High-Voltage Capability
650V breakdown voltage enables reliable operation in high-voltage power systems including industrial power supplies and motor drive applications.
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Low-Loss Performance
Features 2.5x lower gate charge, 50% reduction in switching losses, and 200mV lower Vcesat compared to previous generations, resulting in higher efficiency.
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Fast Switching
Optimized switching speed enables efficient power control in high-frequency applications like inverters and switching power supplies.
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Integrated Diode
Co-packaged with rapid silicon diode technology for free-wheeling current protection and improved circuit reliability.
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Temperature Stability
Mild positive temperature coefficient and stable diode forward voltage ensure consistent performance across operating temperatures.
Provides efficient DC to AC power conversion in uninterruptible power supplies for stable operation during outages.
Enables precise power control in induction heating and resistance welding equipment.
Used in inverters for high-performance variable frequency motor control applications.
Improves power factor correction in AC-DC power supplies by shaping input current.
Provides efficient power conversion in industrial automation and telecom equipment.
