APTM100H45SCTG Field Effect Transistor Transistors FETs MOSFETs Arrays
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
APTM100H45SCTG
Manufacturer:
Microsemi Corporation
Description:
MOSFET 4N-CH 1000V 18A SP4
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
POWER MOS 7®
Introduction
APTM100H45SCTG Specifications
| Part Status | Active |
|---|---|
| FET Type | 4 N-Channel (H-Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 18A |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 25V |
| Power - Max | 357W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Supplier Device Package | SP4 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
APTM100H45SCTG Packaging
Detection
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Stock:
MOQ:
Negotiable