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IRF7907PBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRF7907PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 9.1A/11A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF7907PBF Specifications

Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.1A, 11A
Rds On (Max) @ Id, Vgs 16.4 mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF7907PBF Packaging

Detection

IRF7907PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7907PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7907PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7907PBF Field Effect Transistor Transistors FETs MOSFETs Arrays

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