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BSO207PNTMA1 Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
BSO207PNTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2P-CH 20V 5.7A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
OptiMOS™
Introduction

BSO207PNTMA1 Specifications

Part Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.7A
Rds On (Max) @ Id, Vgs 45 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1013pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package P-DSO-8
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

BSO207PNTMA1 Packaging

Detection

BSO207PNTMA1 Field Effect Transistor Transistors FETs MOSFETs ArraysBSO207PNTMA1 Field Effect Transistor Transistors FETs MOSFETs ArraysBSO207PNTMA1 Field Effect Transistor Transistors FETs MOSFETs ArraysBSO207PNTMA1 Field Effect Transistor Transistors FETs MOSFETs Arrays

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