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Home > products > Field Effect Transistor > IRF8915TR Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF8915TR Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRF8915TR
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 20V 8.9A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF8915TR Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8.9A
Rds On (Max) @ Id, Vgs 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF8915TR Packaging

Detection

IRF8915TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8915TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8915TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8915TR Field Effect Transistor Transistors FETs MOSFETs Arrays

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