Send Message
Home > products > Field Effect Transistor > IRF9910TR Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF9910TR Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRF9910TR
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 20V 10A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF9910TR Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10A, 12A
Rds On (Max) @ Id, Vgs 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF9910TR Packaging

Detection

IRF9910TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF9910TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF9910TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF9910TR Field Effect Transistor Transistors FETs MOSFETs Arrays

Send RFQ
Stock:
MOQ:
Negotiable