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BSO612CV Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
BSO612CV
Manufacturer:
Infineon Technologies
Description:
MOSFET N/P-CH 60V 3A/2A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
SIPMOS®
Introduction

BSO612CV Specifications

Part Status Obsolete
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A, 2A
Rds On (Max) @ Id, Vgs 120 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package P-DSO-8
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

BSO612CV Packaging

Detection

BSO612CV Field Effect Transistor Transistors FETs MOSFETs ArraysBSO612CV Field Effect Transistor Transistors FETs MOSFETs ArraysBSO612CV Field Effect Transistor Transistors FETs MOSFETs ArraysBSO612CV Field Effect Transistor Transistors FETs MOSFETs Arrays

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