BSO615N Field Effect Transistor Transistors FETs MOSFETs Arrays
Specifications
Part Number:
BSO615N
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 60V 2.6A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
SIPMOS®
Introduction
BSO615N Specifications
Part Status | Obsolete |
---|---|
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.6A |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 2.6A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | PG-DSO-8 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
BSO615N Packaging
Detection
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Stock:
MOQ:
Negotiable