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BSO615N Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
BSO615N
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 60V 2.6A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
SIPMOS®
Introduction

BSO615N Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 150 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

BSO615N Packaging

Detection

BSO615N Field Effect Transistor Transistors FETs MOSFETs ArraysBSO615N Field Effect Transistor Transistors FETs MOSFETs ArraysBSO615N Field Effect Transistor Transistors FETs MOSFETs ArraysBSO615N Field Effect Transistor Transistors FETs MOSFETs Arrays

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