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Home > products > Field Effect Transistor > IRF5810TR Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF5810TR Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRF5810TR
Manufacturer:
Infineon Technologies
Description:
MOSFET 2P-CH 20V 2.9A 6-TSOP
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF5810TR Specifications

Part Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 16V
Power - Max 960mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF5810TR Packaging

Detection

IRF5810TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF5810TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF5810TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF5810TR Field Effect Transistor Transistors FETs MOSFETs Arrays

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