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IRF7103Q Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
IRF7103Q
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 50V 3A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF7103Q Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 3A
Rds On (Max) @ Id, Vgs 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 255pF @ 25V
Power - Max 2.4W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF7103Q Packaging

Detection

IRF7103Q Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7103Q Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7103Q Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7103Q Field Effect Transistor Transistors FETs MOSFETs Arrays

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