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Home > products > Field Effect Transistor > IRF8513TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF8513TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRF8513TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 8A/11A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF8513TRPBF Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A, 11A
Rds On (Max) @ Id, Vgs 15.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 766pF @ 15V
Power - Max 1.5W, 2.4W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF8513TRPBF Packaging

Detection

IRF8513TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8513TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8513TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8513TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

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