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Home > products > Field Effect Transistor > IRF8313PBF Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF8313PBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
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Specifications
Part Number:
IRF8313PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 9.7A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

IRF8313PBF Specifications

Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.7A
Rds On (Max) @ Id, Vgs 15.5 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 90nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF8313PBF Packaging

Detection

IRF8313PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8313PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8313PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8313PBF Field Effect Transistor Transistors FETs MOSFETs Arrays

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