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Home > products > Field Effect Transistor > AUIRF7341Q Field Effect Transistor Transistors FETs MOSFETs Arrays

AUIRF7341Q Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
AUIRF7341Q
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 55V 5.1A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

AUIRF7341Q Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 5.1A
Rds On (Max) @ Id, Vgs 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V
Power - Max 2.4W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

AUIRF7341Q Packaging

Detection

AUIRF7341Q Field Effect Transistor Transistors FETs MOSFETs ArraysAUIRF7341Q Field Effect Transistor Transistors FETs MOSFETs ArraysAUIRF7341Q Field Effect Transistor Transistors FETs MOSFETs ArraysAUIRF7341Q Field Effect Transistor Transistors FETs MOSFETs Arrays

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