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Home > products > Field Effect Transistor > AUIRF7379Q Field Effect Transistor Transistors FETs MOSFETs Arrays

AUIRF7379Q Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
AUIRF7379Q
Manufacturer:
Infineon Technologies
Description:
MOSFET N/P-CH 30V 5.8A 8SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

AUIRF7379Q Specifications

Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.8A, 4.3A
Rds On (Max) @ Id, Vgs 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Power - Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

AUIRF7379Q Packaging

Detection

AUIRF7379Q Field Effect Transistor Transistors FETs MOSFETs ArraysAUIRF7379Q Field Effect Transistor Transistors FETs MOSFETs ArraysAUIRF7379Q Field Effect Transistor Transistors FETs MOSFETs ArraysAUIRF7379Q Field Effect Transistor Transistors FETs MOSFETs Arrays

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