Send Message
Home > Products > Field Effect Transistor > IRF8915TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

IRF8915TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRF8915TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 20V 8.9A 8-SOIC
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Series:
HEXFET®
Introduction

IRF8915TRPBF Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8.9A
Rds On (Max) @ Id, Vgs 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF8915TRPBF Packaging

Detection

IRF8915TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8915TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8915TRPBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF8915TRPBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Send RFQ
Stock:
MOQ:
Negotiable