SSM6N35FE,LM Field Effect Transistor Transistors FETs MOSFETs Arrays
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
SSM6N35FE,LM
Manufacturer:
Toshiba Semiconductor And Storage
Description:
MOSFET 2N-CH 20V 0.18A ES6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction
SSM6N35FE,LM Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 180mA |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 50mA, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 (1.6x1.6) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SSM6N35FE,LM Packaging
Detection
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Stock:
MOQ:
Negotiable