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Home > Products > Field Effect Transistor > NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
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Specifications
Part Number:
NTJD1155LT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET N/P-CH 8V 1.3A SOT-363
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

NTJD1155LT1G Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 175 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 400mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTJD1155LT1G Packaging

Detection

NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

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