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Home > products > Field Effect Transistor > QS6J11TR Field Effect Transistor Transistors FETs MOSFETs Arrays

QS6J11TR Field Effect Transistor Transistors FETs MOSFETs Arrays

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
QS6J11TR
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 2P-CH 12V 2A TSMT6
Category:
Transistors - FETs, MOSFETs - Arrays
Family:
Transistors - FETs, MOSFETs - Arrays
Introduction

QS6J11TR Specifications

Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 105 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 6V
Power - Max 600mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSMT6 (SC-95)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

QS6J11TR Packaging

Detection

QS6J11TR Field Effect Transistor Transistors FETs MOSFETs ArraysQS6J11TR Field Effect Transistor Transistors FETs MOSFETs ArraysQS6J11TR Field Effect Transistor Transistors FETs MOSFETs ArraysQS6J11TR Field Effect Transistor Transistors FETs MOSFETs Arrays

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