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Home > Products > IGBT Power Module > APT200GN60B2G IGBT Power Module Transistors IGBTs Single

APT200GN60B2G IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
APT200GN60B2G
Manufacturer:
Microsemi Corporation
Description:
IGBT 600V 283A 682W TO247
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

APT200GN60B2G Specifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 283A
Current - Collector Pulsed (Icm) 600A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 200A
Power - Max 682W
Switching Energy 13mJ (on), 11mJ (off)
Input Type Standard
Gate Charge 1180nC
Td (on/off) @ 25°C 50ns/560ns
Test Condition 400V, 200A, 1 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT200GN60B2G Packaging

Detection

APT200GN60B2G IGBT Power Module Transistors IGBTs SingleAPT200GN60B2G IGBT Power Module Transistors IGBTs SingleAPT200GN60B2G IGBT Power Module Transistors IGBTs SingleAPT200GN60B2G IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable