Send Message
Home > Products > IGBT Power Module > HGTG10N120BND IGBT Power Module Transistors IGBTs Single

HGTG10N120BND IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
HGTG10N120BND
Manufacturer:
Fairchild/ON Semiconductor
Description:
IGBT 1200V 35A 298W TO247
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

HGTG10N120BND Specifications

Part Status Not For New Designs
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 850µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

HGTG10N120BND Packaging

Detection

HGTG10N120BND IGBT Power Module Transistors IGBTs SingleHGTG10N120BND IGBT Power Module Transistors IGBTs SingleHGTG10N120BND IGBT Power Module Transistors IGBTs SingleHGTG10N120BND IGBT Power Module Transistors IGBTs Single

Send RFQ
Stock:
MOQ:
Negotiable