Send Message
Home > Products > IGBT Power Module > IRG8CH106K10F IGBT Power Module Transistors IGBTs Single

IRG8CH106K10F IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRG8CH106K10F
Manufacturer:
Infineon Technologies
Description:
IGBT 1200V 110A DIE
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

IRG8CH106K10F Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) -
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 110A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge 700nC
Td (on/off) @ 25°C 80ns/380ns
Test Condition 600V, 110A, 1 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRG8CH106K10F Packaging

Detection

IRG8CH106K10F IGBT Power Module Transistors IGBTs SingleIRG8CH106K10F IGBT Power Module Transistors IGBTs SingleIRG8CH106K10F IGBT Power Module Transistors IGBTs SingleIRG8CH106K10F IGBT Power Module Transistors IGBTs Single

Send RFQ
Stock:
MOQ:
Negotiable