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Home > Products > IGBT Power Module > APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
APT45GP120B2DQ2G
Manufacturer:
Microsemi Corporation
Description:
IGBT 1200V 113A 625W TMAX
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Series:
POWER MOS 7®
Introduction

APT45GP120B2DQ2G Specifications

Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 113A
Current - Collector Pulsed (Icm) 170A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A
Power - Max 625W
Switching Energy 900µJ (on), 905µJ (off)
Input Type Standard
Gate Charge 185nC
Td (on/off) @ 25°C 18ns/100ns
Test Condition 600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT45GP120B2DQ2G Packaging

Detection

APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs SingleAPT45GP120B2DQ2G IGBT Power Module Transistors IGBTs SingleAPT45GP120B2DQ2G IGBT Power Module Transistors IGBTs SingleAPT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
Negotiable