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Home > products > Field Effect Transistor > MRF6V2010NBR1 Field Effect Transistor Transistors FETs MOSFETs RF Chip

MRF6V2010NBR1 Field Effect Transistor Transistors FETs MOSFETs RF Chip

Category:
Field Effect Transistor
Price:
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Payment Method:
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Specifications
Part Number:
MRF6V2010NBR1
Manufacturer:
NXP USA Inc.
Description:
FET RF 110V 220MHZ TO272-2
Category:
Transistors - FETs, MOSFETs - RF
Family:
Transistors - FETs, MOSFETs - RF
Introduction

MRF6V2010NBR1 Specifications

Part Status Obsolete
Transistor Type LDMOS
Frequency 220MHz
Gain 23.9dB
Voltage - Test 50V
Current Rating -
Noise Figure -
Current - Test 30mA
Power - Output 10W
Voltage - Rated 110V
Package / Case TO-272BC
Supplier Device Package TO-272-2
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

MRF6V2010NBR1 Packaging

Detection

MRF6V2010NBR1 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6V2010NBR1 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6V2010NBR1 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6V2010NBR1 Field Effect Transistor Transistors FETs MOSFETs RF Chip

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