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Home > products > Field Effect Transistor > NPT1007B Field Effect Transistor Transistors FETs MOSFETs RF Chip

NPT1007B Field Effect Transistor Transistors FETs MOSFETs RF Chip

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
NPT1007B
Manufacturer:
M/A-Com Technology Solutions
Description:
TRANSISTOR GAN DC-1200MHZ 200W
Category:
Transistors - FETs, MOSFETs - RF
Family:
Transistors - FETs, MOSFETs - RF
Introduction

NPT1007B Specifications

Part Status Active
Transistor Type HEMT
Frequency 900MHz
Gain 18.3dB
Voltage - Test 28V
Current Rating 20.5A
Noise Figure -
Current - Test 1.4A
Power - Output 53dBm
Voltage - Rated 100V
Package / Case -
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NPT1007B Packaging

Detection

NPT1007B Field Effect Transistor Transistors FETs MOSFETs RF ChipNPT1007B Field Effect Transistor Transistors FETs MOSFETs RF ChipNPT1007B Field Effect Transistor Transistors FETs MOSFETs RF ChipNPT1007B Field Effect Transistor Transistors FETs MOSFETs RF Chip

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