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Home > products > Field Effect Transistor > MRFE6VP8600HR5 Field Effect Transistor Transistors FETs MOSFETs RF Chip

MRFE6VP8600HR5 Field Effect Transistor Transistors FETs MOSFETs RF Chip

Category:
Field Effect Transistor
Price:
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Specifications
Part Number:
MRFE6VP8600HR5
Manufacturer:
NXP USA Inc.
Description:
FET RF 2CH 130V 860MHZ NI-1230
Category:
Transistors - FETs, MOSFETs - RF
Family:
Transistors - FETs, MOSFETs - RF
Introduction

MRFE6VP8600HR5 Specifications

Part Status Active
Transistor Type LDMOS (Dual)
Frequency 860MHz
Gain 19.3dB
Voltage - Test 50V
Current Rating -
Noise Figure -
Current - Test 1.4A
Power - Output 125W
Voltage - Rated 130V
Package / Case NI-1230
Supplier Device Package NI-1230
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

MRFE6VP8600HR5 Packaging

Detection

MRFE6VP8600HR5 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRFE6VP8600HR5 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRFE6VP8600HR5 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRFE6VP8600HR5 Field Effect Transistor Transistors FETs MOSFETs RF Chip

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