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Home > products > Field Effect Transistor > MRF6S20010GNR1 Field Effect Transistor Transistors FETs MOSFETs RF Chip

MRF6S20010GNR1 Field Effect Transistor Transistors FETs MOSFETs RF Chip

Category:
Field Effect Transistor
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Specifications
Part Number:
MRF6S20010GNR1
Manufacturer:
NXP USA Inc.
Description:
FET RF 68V 2.17GHZ TO270-2 GW
Category:
Transistors - FETs, MOSFETs - RF
Family:
Transistors - FETs, MOSFETs - RF
Introduction

MRF6S20010GNR1 Specifications

Part Status Active
Transistor Type LDMOS
Frequency 2.17GHz
Gain 15.5dB
Voltage - Test 28V
Current Rating -
Noise Figure -
Current - Test 130mA
Power - Output 10W
Voltage - Rated 68V
Package / Case TO-270-2 Gull Wing
Supplier Device Package TO-270-2 GULL
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

MRF6S20010GNR1 Packaging

Detection

MRF6S20010GNR1 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6S20010GNR1 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6S20010GNR1 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6S20010GNR1 Field Effect Transistor Transistors FETs MOSFETs RF Chip

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