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IRF7501TR Field Effect Transistor Transistors FETs MOSFETs Arrays

Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
IRF7501TR
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 2N-CH 20V 2.4A MICRO8
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Reihe:
HEXFET®
Einleitung

IRF7501TR Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.4A
Rds On (Max) @ Id, Vgs 135 mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package Micro8™
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF7501TR Packaging

Detection

IRF7501TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7501TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7501TR Field Effect Transistor Transistors FETs MOSFETs ArraysIRF7501TR Field Effect Transistor Transistors FETs MOSFETs Arrays

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Lagerbestand:
MOQ:
Negotiable