Nachricht senden
Zu Hause > Products > IGBT-Leistungsmodul > STGP10NB60SD IGBT Power Module Transistors IGBTs Single

STGP10NB60SD IGBT Power Module Transistors IGBTs Single

Kategorie:
IGBT-Leistungsmodul
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
STGP10NB60SD
Hersteller:
STMicroelectronics
Beschreibung:
IGBT 600V 29A 80W TO220
Kategorie:
Transistoren - IGBTs - einzeln
Familie:
Transistoren - IGBTs - einzeln
Reihe:
PowerMESH™
Einleitung

STGP10NB60SD Specifications

Part Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 29A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Power - Max 80W
Switching Energy 600µJ (on), 5mJ (off)
Input Type Standard
Gate Charge 33nC
Td (on/off) @ 25°C 700ns/1.2µs
Test Condition 480V, 10A, 1 kOhm, 15V
Reverse Recovery Time (trr) 37ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

STGP10NB60SD Packaging

Detection

STGP10NB60SD IGBT Power Module Transistors IGBTs SingleSTGP10NB60SD IGBT Power Module Transistors IGBTs SingleSTGP10NB60SD IGBT Power Module Transistors IGBTs SingleSTGP10NB60SD IGBT Power Module Transistors IGBTs Single

Senden Sie RFQ
Lagerbestand:
MOQ:
Negotiable